van der Waals Epitaxy, Superlubricity, and Polarization of the 2D Ferroelectric SnS.

Tin monosulfide (SnS) is a two-dimensional layered semiconductor that exhibits in-plane ferroelectric order at very small thicknesses and is of interest in highly scaled devices. Here we report the epitaxial growth of SnS on hexagonal boron nitride (hBN) using a pulsed metal-organic chemical vapor deposition process. Lattice matching is observed between the SnS(100) and hBN{11̅0} planes, with no evidence of strain. Atomic force microscopy reveals superlubricity along the commensurate direction of the SnS/hBN interface, and first-principles calculations suggest that friction is controlled by the edges of the SnS islands, rather than interface interactions. Differential phase contrast imaging detects remnant polarization in SnS islands with domains that are not dictated by step-edges in the SnS. The growth of ferroelectric SnS on high quality hBN substrates is a promising step toward electrically switchable ferroelectric semiconducting devices.

High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction.

Cost-effective fabrication of mechanically flexible low-power electronics is important for emerging applications including wearable electronics, artificial intelligence, and the Internet of Things. Here, solution-processed source-gated transistors (SGTs) with an unprecedented intrinsic gain of ~2,000, low saturation voltage of +0.8 ± 0.1 V, and a ~25.6 µW power consumption are realized using an indium oxide In2O3/In2O3:polyethylenimine (PEI) blend homojunction with Au contacts on Si/SiO2. Kelvin probe force microscopy confirms source-controlled operation of the SGT and reveals that PEI doping leads to more effective depletion of the reverse-biased Schottky contact source region. Furthermore, using a fluoride-doped AlOx gate dielectric, rigid (on a Si substrate) and flexible (on a polyimide substrate) SGTs were fabricated. These devices exhibit a low driving voltage of +2 V and power consumption of ~11.5 µW, yielding inverters with an outstanding voltage gain of >5,000. Furthermore, electrooculographic (EOG) signal monitoring can now be demonstrated using an SGT inverter, where a ~1.0 mV EOG signal is amplified to over 300 mV, indicating significant potential for applications in wearable medical sensing and human-computer interfacing.

Edge and Interface Resistances Create Distinct Trade-Offs When Optimizing the Microstructure of Printed van der Waals Thin-Film Transistors.

Inks based on two-dimensional (2D) materials could be used to tune the properties of printed electronics while maintaining compatibility with scalable manufacturing processes. However, a very wide range of performances have been reported in printed thin-film transistors in which the 2D channel material exhibits considerable variation in microstructure. The lack of quantitative physics-based relationships between film microstructure and transistor performance limits the codesign of exfoliation, sorting, and printing processes to inefficient empirical approaches. To rationally guide the development of 2D inks and related processing, we report a gate-dependent resistor network model that establishes distinct microstructure-performance relationships created by near-edge and intersheet resistances in printed van der Waals thin-film transistors. The model is calibrated by analyzing electrical output characteristics of model transistors consisting of overlapping 2D nanosheets with varied thicknesses that are mechanically exfoliated and transferred. Kelvin probe force microscopy analysis on the model transistors leads to the discovery that the nanosheet edges, not the intersheet resistance, limit transport due to their impact on charge carrier depletion and scattering. Our model suggests that when transport in a 2D material network is limited by the near-edge resistance, the optimum nanosheet thickness is dictated by a trade-off between charged impurity screening and gate screening, and the film mobilities are more sensitive to variations in printed nanosheet density. Removal of edge states can enable the realization of higher mobilities with thinner nanosheets due to reduced junction resistances and reduced gate screening. Our analysis of the influence of nanosheet edges on the effective film mobility not only examines the prospects of extant exfoliation methods to achieve the optimum microstructure but also provides important perspectives on processes that are essential to maximizing printed film performance.

Urban life: a model of people and places.

We introduce the Urban Life agent-based simulation used by the Ground Truth program to capture the innate needs of a human-like population and explore how such needs shape social constructs such as friendship and wealth. Urban Life is a spatially explicit model to explore how urban form impacts agents' daily patterns of life. By meeting up at places agents form social networks, which in turn affect the places the agents visit. In our model, location and co-location affect all levels of decision making as agents prefer to visit nearby places. Co-location is necessary (but not sufficient) to connect agents in the social network. The Urban Life model was used in the Ground Truth program as a virtual world testbed to produce data in a setting in which the underlying ground truth was explicitly known. Data was provided to research teams to test and validate Human Domain research methods to an extent previously impossible. This paper summarizes our Urban Life model's design and simulation along with a description of how it was used to test the ability of Human Domain research teams to predict future states and to prescribe changes to the simulation to achieve desired outcomes in our simulated world.

Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer.

Excitonic properties in 2D heterobilayers are closely governed by charge transfer (CT) and excitonic energy transfer (ET) at van der Waals interfaces. Various means have been employed to modulate the interlayer CT and ET, including electrical gating and modifying interlayer spacing, but with limited extent in their controllability. Here, we report a novel method to modulate these transfers in the MoS2/WS2 heterobilayer by applying compressive strain under hydrostatic pressure. Raman and photoluminescence measurements, combined with density functional theory calculations, show pressure-enhanced interlayer interaction of the heterobilayer. Heterobilayer-to-monolayer photoluminescence intensity ratio (η) of WS2 decreases by five times up to ≈4 GPa, suggesting enhanced ET, whereas it increases by an order of magnitude at higher pressures and reaches almost unity. Theoretical calculations show that orbital switching and charge transfers in the heterobilayer's hybridized conduction band are responsible for the non-monotonic modulation of the transfers. Our findings provide a compelling approach toward effective mechanical control of CT and ET in 2D excitonic devices.

Readily Accessible Metallic Micro-Island Arrays for High-Performance Metal Oxide Thin-Film Transistors.

Thin-film transistors using metal oxide semiconductors are essential in many unconventional electronic devices. Nevertheless, further advances will be necessary to broaden their technological appeal. Here, a new strategy is reported to achieve high-performance solution-processed metal oxide thin-film transistors (MOTFTs) by introducing a metallic micro-island array (M-MIA) on top of the MO back channel, where the MO is a-IGZO (amorphous indium-gallium-zinc-oxide). Here Al-MIAs are fabricated using honeycomb cinnamate cellulose films, created by a scalable breath-figure method, as a shadow mask. For IGZO TFTs, the electron mobility (µe ) increases from ≈3.6 cm2 V-1 s-1 to near 15.6 cm2 V-1 s-1 for optimal Al-MIA dimension/coverage of 1.25 µm/51%. The Al-MIA IGZO TFT performance is superior to that of controls using compact/planar Al layers (Al-PL TFTs) and Au-MIAs with the same channel coverage. Kelvin probe force microscopy and technology computer-aided design simulations reveal that charge transfer occurs between the Al and the IGZO channel which is optimized for specific Al-MIA dimensions/surface channel coverages. Furthermore, such Al-MIA IGZO TFTs with a high-k fluoride-doped alumina dielectric exhibit a maximum µe of >50.2 cm2 V-1 s-1 . This is the first demonstration of a micro-structured MO semiconductor heterojunction with submicrometer resolution metallic arrays for enhanced transistor performance and broad applicability to other devices.

Change of human mobility during COVID-19: A United States case study.

With the onset of COVID-19 and the resulting shelter in place guidelines combined with remote working practices, human mobility in 2020 has been dramatically impacted. Existing studies typically examine whether mobility in specific localities increases or decreases at specific points in time and relate these changes to certain pandemic and policy events. However, a more comprehensive analysis of mobility change over time is needed. In this paper, we study mobility change in the US through a five-step process using mobility footprint data. (Step 1) Propose the Delta Time Spent in Public Places (ΔTSPP) as a measure to quantify daily changes in mobility for each US county from 2019-2020. (Step 2) Conduct Principal Component Analysis (PCA) to reduce the ΔTSPP time series of each county to lower-dimensional latent components of change in mobility. (Step 3) Conduct clustering analysis to find counties that exhibit similar latent components. (Step 4) Investigate local and global spatial autocorrelation for each component. (Step 5) Conduct correlation analysis to investigate how various population characteristics and behavior correlate with mobility patterns. Results show that by describing each county as a linear combination of the three latent components, we can explain 59% of the variation in mobility trends across all US counties. Specifically, change in mobility in 2020 for US counties can be explained as a combination of three latent components: 1) long-term reduction in mobility, 2) no change in mobility, and 3) short-term reduction in mobility. Furthermore, we find that US counties that are geographically close are more likely to exhibit a similar change in mobility. Finally, we observe significant correlations between the three latent components of mobility change and various population characteristics, including political leaning, population, COVID-19 cases and deaths, and unemployment. We find that our analysis provides a comprehensive understanding of mobility change in response to the COVID-19 pandemic.

Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors.

Black phosphorus has been recently suggested as a very promising material for use in 2D field-effect transistors. However, due to its poor stability under ambient conditions, this material has not yet received as much attention as for instance MoS2. We show that the recently demonstrated Al2O3 encapsulation leads to highly stable devices. In particular, we report our long-term study on highly stable black phosphorus field-effect transistors, which show stable device characteristics for at least eight months. This high stability allows us to perform a detailed analysis of their reliability with respect to hysteresis as well as the arguably most important reliability issue in silicon technologies, the bias-temperature instability. We find that the hysteresis in these transistors depends strongly on the sweep rate and temperature. Moreover, the hysteresis dynamics in our devices are reproducible over a long time, which underlines their high reliability. Also, by using detailed physical models for oxide traps developed for Si technologies, we are able to capture the channel electrostatics of the black phosphorus FETs and determine the position of the defect energy band. Finally, we demonstrate that both hysteresis and bias-temperature instabilities are due to thermally activated charge trapping/detrapping by oxide traps and can be reduced if the device is covered by Teflon-AF.

Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films.

We report the first direct dry transfer of a single-crystalline thin film grown by molecular beam epitaxy. A double cantilever beam fracture technique was used to transfer epitaxial bismuth thin films grown on silicon (111) to silicon strips coated with epoxy. The transferred bismuth films retained electrical, optical, and structural properties comparable to the as-grown epitaxial films. Additionally, we isolated the bismuth thin films on freestanding flexible cured-epoxy post-transfer. The adhesion energy at the bismuth/silicon interface was measured to be ∼1 J/m2, comparable to that of exfoliated and wet transferred graphene. This low adhesion energy and ease of transfer is unexpected for an epitaxially grown film and may enable the study of bismuth's unique electronic and spintronic properties on arbitrary substrates. Moreover, this method suggests a route to integrate other group-V epitaxial films (i.e., phosphorus) with arbitrary substrates, as well as potentially to isolate bismuthene, the atomic thin-film limit of bismuth.

Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure.

A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D /IG measurements.

Thermal Oxidation of WSe2 Nanosheets Adhered on SiO2/Si Substrates.

Because of the drastically different intralayer versus interlayer bonding strengths, the mechanical, thermal, and electrical properties of two-dimensional (2D) materials are highly anisotropic between the in-plane and out-of-plane directions. The structural anisotropy may also play a role in chemical reactions, such as oxidation, reduction, and etching. Here, the composition, structure, and electrical properties of mechanically exfoliated WSe2 nanosheets on SiO2/Si substrates were studied as a function of the extent of thermal oxidation. A major component of the oxidation, as indicated from optical and Raman data, starts from the nanosheet edges and propagates laterally toward the center. Partial oxidation also occurs in certain areas at the surface of the flakes, which are shown to be highly conductive by microwave impedance microscopy. Using secondary ion mass spectroscopy, we also observed extensive oxidation at the WSe2-SiO2 interface. The combination of multiple microcopy methods can thus provide vital information on the spatial evolution of chemical reactions on 2D materials and the nanoscale electrical properties of the reaction products.

Desmopressin improves platelet function in uremic patients taking antiplatelet agents who require emergent invasive procedures.

Uremia is associated with platelet dysfunction and can cause a bleeding tendency resulting in a major bleeding event after an invasive procedure or surgery that may be aggravated by antiplatelet agents. We prospectively investigated the potential of desmopressin to improve platelet dysfunction and to lower bleeding risk after emergent invasive procedures in uremic patients taking antiplatelet drugs. Twenty-three patients were enrolled with a mean age of 60.2 ± 11.7 years. Baseline blood urea nitrogen and creatinine were 70.5 ± 29.4 and 10.02 ± 4.52 mg/dL, respectively. Twenty-one patients took aspirin. All patients were infused with desmopressin before their invasive procedures, which were a central catheter insertion for emergent hemodialysis in 13 patients, percutaneous nephrostomy in 7 patients, and angiography through arm or leg vessels in 3 patients. After desmopressin infusion, both the hematocrit and platelet count were slightly decreased without changes in prothrombin time or activated partial thrombin time. Collagen/epinephrine-closure time was significantly shortened from 252.7 ± 40.7 to 144.6 ± 51.0 s (p < 0.001). There were minimal bleeding in 20 patients and mild bleeding in 3 patients. None experienced severe bleeding event or required additional intervention for bleeding control. There were no adverse events including the decrease of serum sodium concentration. In conclusion, a single infusion of desmopressin before invasive procedures in uremic patients on antiplatelet drugs appeared to be well tolerated and improved platelet dysfunction measured by collagen/epinephrine-closure time.

Toll-like receptor 4/spleen tyrosine kinase complex in high glucose signal transduction of proximal tubular epithelial cells.

BACKGROUND/AIMS: High glucose activates spleen tyrosine kinase (Syk) in human proximal tubular epithelial cells (HK-2 cells), which leads to NF-κB activation and transforming growth factor-ß1 (TGF-ß1) production. We explored the signal transduction pathway from high glucose to Syk activation. METHODS: The pathway was evaluated by siRNA transfection, immunoprecipitation and Western blot. RESULTS: High glucose stimulated Syk activation within 10 min. Depletion of toll-like receptor 4 (TLR4) attenuated high glucose-induced Syk activation, NF-κB p65 nuclear translocation, and TGF-ß1 production. In addition, TLR4 inhibitor (CLI-095), TLR4-neutralizing antibody, and depletion of myeloid differentiation factor 88 (MyD88) all attenuated high glucose-induced Syk activation. As an evidence of TLR4 activation, interleukin-1 receptor-associated kinase 1 was recruited to MyD88 and TLR4 upon exposure to high glucose. Syk was co-immunoprecipitated with TLR4, and Syk bound to TLR4 was activated by high glucose. High-mobility group box-1 (HMGB-1), an endogenous activator of TLR4, rapidly increased in TLR4 immunoprecipitates upon high glucose stimulation, and this association was reduced by N-acetylcysteine, an antioxidant. An HMGB-1 inhibitor glycyrrhizin suppressed high glucose-induced Syk activation. CONCLUSION: Syk is constitutively associated with TLR4. High glucose induces an immediate, reactive oxygen species-dependent, extracellular release of HMGB-1 which binds to TLR4 and activates it, leading to Syk activation.

Toward air-stable multilayer phosphorene thin-films and transistors.

Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene, and its thickness-tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ideal for optoelectronics and flexible devices. However, its instability in air is of paramount concern for practical applications. Here, we demonstrate air-stable BP devices with dielectric and hydrophobic encapsulation. Microscopy, spectroscopy, and transport techniques were employed to elucidate the aging mechanism, which can initiate from the BP surface for bare samples, or edges for samples with thin dielectric coating, highlighting the ineffectiveness of conventional scaled dielectrics. Our months-long studies indicate that a double layer capping of Al2O3 and hydrophobic fluoropolymer affords BP devices and transistors with indefinite air-stability for the first time, overcoming a critical material challenge for applied research and development.

Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.

High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V·s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles.

Emodin attenuates radioresistance induced by hypoxia in HepG2 cells via the enhancement of PARP1 cleavage and inhibition of JMJD2B.

Radioresistance in the tumor and radiotoxicity in the non­tumorous liver significantly restrict efficient radiotherapy of hepatocellular carcinoma (HCC). It is therefore important to study the radioresistance mechanism and development of radiosensitization to optimize the effect of irradiation on cancer cells. Emodin (1, 3, 8­trihydroxy­6­methylanthraquinone) is a plant­derived polyphenol, possessing anticancer properties. It is known to act as a radiosensitizer in human HCC cell lines. The aim of this study was to evaluate the role of emodin in radioresistance of human HCC cell lines as well as the underlying radiosensitization mechanism. The human HCC cell line (HepG2) was used in this study. Four different treatment groups, i.e., no treatment (control), irradiation (10 Gy, one fraction), emodin (10 µM), and a combination of irradiation and emodin (10 Gy+10 µM) were used for two environmental conditions: hypoxia (1% O2) and normoxia (20% O2). The cells were exposed to the respective treatments for 24 and 72 h. Following the treatment, the cell viability was determined by the 3­(4,5­dimethylthiazol­2­yl)­2,5­diphenyltetrazolium bromide (MTT) assay, and the radiosensitization mechanism was evaluated by western blotting. The proliferation of HepG2 cells was significantly suppressed in the treatment groups under hypoxic and normoxic conditions in the following order: combination of irradiation and emodin>irradiation only >emodin only. The combination of irradiation and emodin induced apoptotic signaling activities such as cleavage of poly (ADP­ribose) polymerase (PARP)­1 as well as the downregulation of epigenetic signaling such as JMJD1A and JMJD2B. Emodin attenuated radioresistance in the HepG2 cells via upregulation of the apoptotic signals and down-regulation of the proliferative signals. These results suggested that emodin is a potential candidate for the radiosensitization of HCC cells and can aid in identifying novel therapeutic strategies for HCC radiotherapy.

Activation of AMP-activated protein kinase inhibits ER stress and renal fibrosis.

It has been suggested that endoplasmic reticulum (ER) stress facilitates fibrotic remodeling. Therefore, modulation of ER stress may serve as one of the possible therapeutic approaches to renal fibrosis. We examined whether and how activation of AMP-activated protein kinase (AMPK) suppressed ER stress induced by chemical ER stress inducers [tunicamycin (TM) and thapsigargin (TG)] and also nonchemical inducers in tubular HK-2 cells. We further investigated the in vivo effects of AMPK on ER stress and renal fibrosis. Western blot analysis, immunofluorescence, small interfering (si)RNA experiments, and immunohistochemical staining were performed. Metformin (the best known clinical activator of AMPK) suppressed TM- or TG-induced ER stress, as shown by the inhibition of TM- or TG-induced upregulation of glucose-related protein (GRP)78 and phosphorylated eukaryotic initiation factor-2α through induction of heme oxygenase-1. Metformin inhibited TM- or TG-induced epithelial-mesenchymal transitions as well. Compound C (AMPK inhibitor) blocked the effect of metformin, and 5-aminoimidazole-4-carboxamide-1ß riboside (another AMPK activator) exerted the same effects as metformin. Transfection with siRNA targeting AMPK blocked the effect of metformin. Consistent with the results of cell culture experiments, metformin reduced renal cortical GRP78 expression and increased heme oxygenase-1 expression in a mouse model of ER stress-induced acute kidney injury by TM. Activation of AMPK also suppressed ER stress by transforming growth factor-ß, ANG II, aldosterone, and high glucose. Furthermore, metformin reduced GRP78 expression and renal fibrosis in a mouse model of unilateral ureteral obstruction. In conclusion, AMPK may serve as a promising therapeutic target through reducing ER stress and renal fibrosis.

A case of carbon monoxide poisoning with thrombus in right atrium.

Carbon monoxide is a nonirritant, odorless, colorless gas. Its effects are prominent in organs most sensitive to oxygen deprivation, such as the heart, brain, and kidney. Although less frequently, an association between thromboembolic events and carbon monoxide poisoning has been shown in the literatures. In this case, we report a case of atrial thrombus associated with carbon monoxide poisoning.

Up-regulation of stromal cell-derived factor 1 (CXCL12) production in rheumatoid synovial fibroblasts through interactions with T lymphocytes: role of interleukin-17 and CD40L-CD40 interaction.

OBJECTIVE: Stromal cell-derived factor 1 (SDF-1) is a potent chemoattractant for memory T cells in inflamed rheumatoid arthritis (RA) synovium. This study was undertaken to investigate the effect of interleukin-17 (IL-17) and CD40-CD40L interaction on SDF-1 production in RA fibroblast-like synoviocytes (FLS). METHODS: Synovial fluid (SF) and serum levels of SDF-1 in RA patients were measured by enzyme-linked immunosorbent assay (ELISA). The SDF-1 produced by cultured RA FLS was evaluated by real-time polymerase chain reaction and ELISA after FLS were treated with IL-17 and inhibitors of intracellular signal molecules. The SDF-1 level was also determined after FLS were cocultured with T cells in the presence and absence of IL-17. RESULTS: Concentrations of SDF-1 in the sera and SF were higher in RA patients than in osteoarthritis patients, although the increase in the serum levels did not reach statistical significance. The production of SDF-1 in RA FLS was enhanced by IL-17 stimulation. This effect of IL-17 was blocked by inhibitors of phosphatidylinositol 3-kinase (PI 3-kinase), NF-kappaB, and activator protein 1 (AP-1). When FLS were cocultured with T cells, SDF-1 production was up-regulated, especially in the presence of IL-17, but FLS were inhibited by neutralizing anti-IL-17 and anti-CD40L antibodies. Addition of RA SF to cultured RA FLS significantly up-regulated SDF-1 messenger RNA expression, which was hampered by pretreatment with anti-IL-17 antibody. CONCLUSION: SDF-1 is overproduced in RA FLS, and IL-17 could up-regulate the expression of SDF-1 in RA FLS via pathways mediated by PI 3-kinase, NF-kappaB, and AP-1. Our findings suggest that inhibition of the interaction between IL-17 from T cells and SDF-1 in FLS may provide a new therapeutic approach in RA.

Effect of polyvinyl alcohol on rare earths (Gd and Tb) separation by extraction resin.

Small amounts of polyvinyl alcohol (PVA; 0.5-1.5 wt.%) added to extraction resin was synthesized by suspension polymerization. Their effects on the separation of rare earths (RE) were then investigated by conducting a relative comparison with the performance of pure extraction resin. The supporter and extractant of extraction resin were styrene-divinyl benzene copolymer and 2-ethylhexyl phosphonic acid mono-2-ethylhexyl ester (HEH[EHP]), respectively. The size of PVA added extraction resin was reduced by 40% particle size of pure extraction resin. Furthermore, a higher level of PVA addition, shorter effluent range and smaller resolution values were shown in the extraction. In constant PVA added extraction resin, more diluted effluent concentration, longer effluent range and bigger resolution values were shown in the extraction. This could be the result of the bonding force between the rare earths and the extraction resin due to the nature of the interaction between the OH(-) group in PVA and the OH(-) group in extractants such as HEH[EHP]. Thus, the bonding force between the RE and extractants was determined by the level of PVA in the resins and the acidity of the effluent solution became another important factor in the extraction performance of the rare earths. As a result, the optimal level of PVA addition and the concentration of effluent for RE (Gd and Tb) separation were determined to be 0.5 wt.% of PVA and 0.05 M HCl of effluent, respectively.